Wiring component

ABSTRACT

Disclosed herein is a wiring component that includes a base material and a planar coil pattern formed on the base material. The planar coil pattern includes a coil wiring portion having one end, other end, and first to third connecting positions, the second connecting position being closer to the other end compared with the first connecting position, the third connecting position being closer to the one end compared with the second connecting position; a power-feed wiring portion connected to the first connecting position; and a connection wiring portion that short-circuits the second connecting position and the third connecting position. A cross-section structure of the planar coil pattern has a base resin layer formed on the base material, and a conductive layer formed on the base resin layer.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a wiring component, and particularly toa wiring component as a precursor to be used for manufacturing a planarcoil.

Description of Related Art

A planar coil represented by an IC tag and an NFC (Near Field radioCommunication) antenna is formed by forming a metal layer on a basematerial, covering a desired region of the metal layer with an etchingresist, and removing a region where the resist is not formed by etching.However, according to this method, a clean room is required for formingthe etching resist, and a new photomask is required every time a coilshape is changed, thereby increasing an initial cost. To cope with theseissues, such a method has been studied that a plating catalyst isprinted on a base material in a desired pattern and performingelectroless plating to form a metal layer in a desired shape withoutforming an etching resist (See, for example, Japanese Patent ApplicationLaid-open No. 2010-168413).

Generally, electroless plating has a slow deposition rate and a lowproductivity. Therefore, electrolytic plating is performed afterperforming the electroless plating. However, the electrolytic platinghas low uniformity of deposition, different from the electrolessplating. Therefore, when a planar coil is formed by the electrolyticplating, the following problems occur. That is, when a plating currentis supplied from an end of the planar coil, a sufficient platingthickness can be obtained at one end close to a feeding point. However,because the other end of the planar coil is far from the feeding point,the plating thickness becomes insufficient, thereby causing filmthickness distribution (film thickness difference) in the planar coil.Particularly, when the planar coil has a spiral pattern, an innerperipheral end becomes an open end surrounded by a spiral pattern loop,and a problem of the film thickness difference between the innerperipheral end and an outer peripheral end becomes noticeable.

If a three-dimensional structure of the spiral pattern is permitted, theinner peripheral end and the outer peripheral end are connected to eachother via another wiring layer and the entire pattern is formed into oneloop, thereby enabling to solve the problem of the film thicknessdifference at the both ends easily. However, if the spiral pattern is tobe completed in one conductive layer, the above problem still remains.

To suppress a difference in the plating thickness over the entire coilpattern, there has been proposed a method in which electrolytic platingis performed in a state in which each turn of the coil pattern isshort-circuited at the time of electrolytic plating by using a negativeelectrode bar in a plating tank (See Japanese Patent ApplicationLaid-open No. 2009-246363).

However, as described in Japanese Patent Application Laid-Open No.2009-246363, when an electrode bar for electrolytic plating is used as ashort-circuit line, plating growth at a contact position of theelectrode bar is partially suppressed, and the entire coil pattern has anon-uniform film thickness distribution. Therefore, another solution hasbeen desired.

SUMMARY

It is therefore an object of the present invention to provide a wiringcomponent for a planar coil that does not require a patterning processof a metal layer using an etching resist, and can reduce a filmthickness difference even when the planar coil is formed by electrolyticplating.

To solve the above problems, a wiring component according to the presentinvention includes a base material, and a planar coil pattern formed onthe base material. The planar coil pattern includes: a coil wiringportion having one end, other end, and first to third connectingpositions, the second connecting position being closer to the other endcompared with the first connecting position, the third connectingposition being closer to the one end compared with the second connectingposition; a power-feed wiring portion connected to the first connectingposition; and a connection wiring portion that short-circuits the secondconnecting position and the third connecting position. A cross-sectionstructure of the planar coil pattern has a base resin layer formed onthe base material, and a conductive layer formed on the base resinlayer.

According to the present invention, the planar coil pattern can beformed without using an etching resist. Further, since the wiring lengthfrom the first connecting position of the power-feed wiring portion tothe other end of the coil wiring portion can be reduced, a filmthickness difference at the both ends of the coil wiring portion can bereduced when the planar coil pattern is formed by electrolytic plating.

In the present invention, the coil wiring portion includes a spiralpattern, and it is preferable that the one end and the other end of thecoil wiring portion are respectively an outer peripheral end and aninner peripheral end of the spiral pattern. The inner peripheral end ofthe spiral pattern is an open end that is surrounded by a spiral loopand is not connected to anywhere. Therefore, an electrical resistancedifference between the outer peripheral end and the inner peripheral endis large as it is, and the problem of the film thickness difference isnoticeable. However, according to the present invention, by providingthe connection wiring portion to decrease the distance from the innerperipheral end of the coil wiring portion of the spiral pattern to afeeding point, plating deposition at the inner peripheral end can bepromoted, thereby enabling to resolve the film thickness difference atthe both ends of the spiral pattern.

In the present invention, it is preferable that the second connectingposition is located at the inner peripheral end of the spiral pattern.In this case, it is preferable that the third connecting position islocated at a cross point of an innermost turn of the spiral pattern andan extension line extending from the inner peripheral end in a windingdirection. With such a configuration, a film thickness difference at theboth ends of the spiral pattern can be reduced, and removal of theconnection wiring portion can be easily performed. When the number ofturns of the spiral pattern is one, the innermost turn becomes common toan outermost turn.

In the present invention, it is preferable that the first connectingposition is apart from the outer peripheral end and located on anoutermost turn of the spiral pattern. According to this configuration, adistance from the feeding point to the outer peripheral end and adistance from the feeding point to the inner peripheral end can befurther reduced, thereby enabling to further reduce the film thicknessdifference in the conductive layer at the both ends.

In the present invention, it is preferable that the base material is aresin film. According to this configuration, a very thin planar coilthat can be easily handled can be manufactured at a low cost.

In the present invention, it is preferable that the base resin layer ismade of resin including at least one kind of metal selected from Pd, Cu,Ni, Ag, Pt, and Au. By forming the base resin layer on a surface of thebase material, a conductive pattern can be formed on the base material.

In the present invention, it is preferable that the conductive layerincludes a base conductive layer formed on the base resin layer byelectroless plating, and a wiring conductive layer thicker than the baseconductive layer, formed on the base conductive layer by electrolyticplating. In this case, it is preferable that the base conductive layerand the wiring conductive layer are made of at least one kind of metalselected from Cu, Ag, and Au, respectively. Accordingly, a conductivelayer having a sufficient thickness can be easily formed, and ahigh-quality planar coil can be manufactured at a low cost.

According to the present invention, it is possible to provide a wiringcomponent for a planar coil that does not require a patterning processof a metal layer using an etching resist, and can reduce a filmthickness difference even when the planar coil is formed by electrolyticplating.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of this inventionwill become more apparent by reference to the following detaileddescription of the invention taken in conjunction with the accompanyingdrawings, wherein:

FIGS. 1A and 1B are diagrams showing a configuration of a planar coilaccording to an embodiment of the present invention, where FIG. 1A is aplan view, and FIG. 1B is a sectional view along a line Y-Y in FIG. 1A;

FIG. 2 is a flowchart explaining a manufacturing method of the planarcoil;

FIGS. 3A and 3B are explanatory diagrams for explaining one ofmanufacturing processes of the planar coil (printing process), whereFIG. 3A is a plan view, and FIG. 3B is a sectional view along a line Y-Yin FIG. 3A;

FIGS. 4A and 4B are explanatory diagrams for explaining one ofmanufacturing processes of the planar coil (electroless platingprocess), where FIG. 4A is a plan view, and FIG. 4B is a sectional viewalong a line Y-Y in FIG. 4A;

FIGS. 5A and 5B are explanatory diagrams for explaining one ofmanufacturing processes of the planar coil (electrolytic platingprocess), where FIG. 5A is a plan view, and FIG. 5B is a sectional viewalong a line Y-Y in FIG. 5A;

FIG. 6 is a schematic diagram for explaining an electrolytic platingprocess;

FIG. 7 is a plan view for explaining one of manufacturing processes ofthe planar coil (removing process);

FIGS. 8A to 8F are plan views showing modifications of the planar coilpattern;

FIGS. 9A to 9C are plan views showing a configuration of wiring patternsof wiring components used in an evaluation test of planar coils; and

FIG. 10 is a table indicating a result of the evaluation test of theplanar coils.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the present invention will now be explained indetail with reference to the drawings.

FIGS. 1A and 1B are diagrams showing a configuration of a planar coilaccording to an embodiment of the present invention. FIG. 1A is a planview, and FIG. 1B is a sectional view along a line Y-Y in FIG. 1A.

As shown in FIGS. 1A and 1B, a planar coil 1 includes a base material10, and a spiral planar coil pattern 11 formed on one of principalsurfaces of the base material 10. The base material 10 is preferablymade of, for example, a resin film (a flexible substrate) such as a PETfilm or a polyimide film. When the resin film is used, an extremely thinplanar coil 1 that is easily handled can be manufactured at a low cost.However, the base material 10 can be a rigid substrate such as a glassepoxy substrate. Further, the base material can have a single layerstructure or a multi-layer structure.

The planar coil pattern 11 includes a spiral coil wiring portion 11 a,and pads 11 b and 11 c provided respectively at an outer peripheral end11 a ₁ (one end) and an inner peripheral end 11 a ₂ (the other end) ofthe coil wiring portion 11 a. The coil wiring portion 11 a according tothe present embodiment has a rectangular spiral pattern. However, thecoil wiring portion 11 a can have a circular spiral pattern, or anelliptical or oval spiral pattern. It is preferable that the number ofturns of the coil wiring portion 11 a is at least one turn, and isparticularly preferable that the number of turns is 2 to 10 turns. It isbecause, if the number of turns is less than one, the problem to besolved by the present invention hardly occurs, and if the number ofturns is too large, such an effect of the present invention that aresistance difference at both ends of the coil wiring portion 11 a isreduced cannot be obtained.

The width of the coil wiring portion 11 a is preferably from 0.05millimeter to 1 millimeter, and particularly preferably from 0.1millimeter to 0.5 millimeter. It is because it is difficult to form anextremely fine planar coil pattern 11 having a wiring width of less than0.05 millimeter by electrolytic plating. Further, it is because aproblem of a film thickness difference at a coil end portion due to aresistance difference between the both ends, that is, between the outerperipheral end 11 a ₁ and the inner peripheral end 11 a ₂ hardly occursin a coil wiring portion 11 a having a wiring width exceeding 1millimeter.

A cross-section structure of the planar coil pattern 11 includes a baseresin layer L0, a base conductive layer L1 formed on the base resinlayer L0 by electroless plating, and a wiring conductive layer L2 formedon the base conductive layer L1 by electrolytic plating. The base resinlayer L0 and the base conductive layer L1 constitute a base layer LBhaving a multi-layer structure with respect to the wiring conductivelayer L2. Further, the base conductive layer L1 and the wiringconductive layer L2 constitute a conductive layer LL as a conductivepattern constituting the planar coil pattern 11.

The base resin layer L0 is preferably made of resin (conductive polymer)including at least one kind of metal selected from Pd, Cu, Ni, Ag, Pt,andAu. The conductive layer LL can be formed on the base material 10 byproviding the base resin layer L0.

The base conductive layer L1 is preferably made of at least one kind ofmetal selected from Cu, Ag, and Au. The wiring conductive layer L2 canbe formed on the base material 10 by electrolytic plating by providingthe base conductive layer L1. The thickness of the base conductive layerL1 is preferably from 0.05 micrometer to 2 micrometers.

The wiring conductive layer L2 may be a thicker layer than the baseconductive layer L1, and is preferably made of at least one kind ofmetal selected from Cu, Ag, and Au. The conductive layer LL having asufficient thickness can be formed on the base material 10 by providingthe wiring conductive layer L2.

The thickness of the conductive layer LL is not particularly limited.However, the thickness of the conductive layer LL is preferably 50micrometers or less, and is particularly preferably 38 micrometers orless. It is because a processing time by electrolytic plating increasesas the thickness of the conductive layer LL constituting the planar coilpattern 11 increases, and the productivity decreases. Meanwhile, thethickness of the conductive layer LL is preferably 1 micrometer or more.It is because if the thickness of the conductive layer LL is too thin, asufficient productivity can be obtained only by electroless platinghaving good uniformity of deposition and there is less significance informing the conductive layer LL by electrolytic plating.

FIG. 2 is a flowchart explaining a manufacturing method of the planarcoil. FIGS. 3A, 3B, 4A, 4B, 5A, and 5B are explanatory diagrams ofmanufacturing processes of the planar coil. FIGS. 3A, 4A, and 5A areplan views, and FIGS. 3B, 4B, and 5B are sectional views along a lineY-Y in FIGS. 3A, 4A, and 5A, respectively.

As shown in FIG. 2 and FIGS. 3A and 3B, in manufacturing of the planarcoil 1, the base resin layer L0 is first formed on the base material 10(FIG. 2: Step S1). The base resin layer L0 functions as a catalyst thatpromotes formation of the base conductive layer L1 by electrolessplating. The base resin layer L0 is preferably formed by printing, andcan be formed, for example, by screen printing or an inkjet method. Inthis way, the base material 10 formed with the base resin layer L0constitutes a wiring component 5A as a first intermediary body withrespect to the planar coil 1. According to the manufacturing method ofthe planar coil 1 according to the present embodiment, the wiringcomponent 5A for manufacturing a planar coil can be prepared beforehandto start manufacturing of the planar coil 1.

As shown in FIG. 3A, a planar shape of the base resin layer L0 includesthe spiral coil wiring portion 11 a that constitutes the planar coilpattern 11, the pads lib and 11 c respectively provided at the both endsof the coil wiring portion 11 a, a power-feed wiring portion 11 dconnected to a point in the middle (the first connecting position) ofthe coil wiring portion 11 a, and a connection wiring portion 11 e thatshort-circuits the inner peripheral end 11 a ₂ (the second connectingposition) of the coil wiring portion 11 a and a connecting position (thethird connecting position) closer to the outer peripheral end 11 a ₁side than to the inner peripheral end 11 a ₂.

The power-feed wiring portion 11 d has a wiring pattern connected on theside of the outer peripheral end 11 a ₁ of the coil wiring portion 11 a,and is provided to feed power from the external power source to the coilwiring portion 11 a at the time of performing electrolytic plating. Aconnecting position (the first connecting position) P₁ of the power-feedwiring portion 11 d is preferably connected to the middle of theoutermost turn of the coil wiring portion 11 a, and particularlypreferably connected to the side of the inner peripheral end 11 a ₂ ofthe outermost turn as close as possible. Accordingly, a differencebetween a wiring length from a connecting point (a feeding point) withthe power-feed wiring portion 11 d of the coil wiring portion 11 a tothe inner peripheral end 11 a ₂ and a wiring length from the feedingpoint to the outer peripheral end 11 a ₁ is reduced to reduce aresistance difference at the both ends. Therefore, the coil wiringportion 11 a having a small film thickness difference between the bothends can be obtained. However, if the connecting position P₁ of thepower-feed wiring portion 11 d approaches too close to the side of theinner peripheral end 11 a ₂, a distance between the power-feed wiringportion 11 d and the outer peripheral end 11 a ₁ of the coil wiringportion 11 a becomes too close to each other, and formation of thepower-feed wiring portion 11 d and removal of the power-feed wiringportion 11 d described later become difficult. Accordingly, anappropriate gap is required between the connecting position P₁ and theinner peripheral end 11 a ₂.

To reduce the influence of wiring resistance of the power-feed wiringportion 11 d, the width thereof is preferably equal to or larger thanthe width of the coil wiring portion 11 a, and particularly preferablylarger than the width of the coil wiring portion 11 a. The number of thepower-feed wiring portion 11 d is not particularly limited, and thearbitrary number of power-feed wiring portions 11 d can be connected.However, the power-feed wiring portion 11 d needs to be removedeventually to obtain the planar coil 1, and it is not desired toincrease the number of the power-feed wiring portions 11 d excessively,because it leads to an increase of the manufacturing cost.

The connection wiring portion 11 e has a wiring pattern thatshort-circuits the inner peripheral end 11 a ₂ (the second connectingposition P₂) of the coil wiring portion 11 a and an arbitrary position(the third connecting position P₃) closer to the outer peripheral end 11a ₁ side than to the inner peripheral end 11 a ₂, and is provided toreduce a distance (a wiring length) from the feeing point to the innerperipheral end 11 a ₂ as much as possible. In the present embodiment,the connection wiring portion 11 e passes through the inner peripheralend 11 a ₂ and is connected to a position extending straight in thewinding direction from the outer peripheral end 11 a ₁ toward the innerperipheral end 11 a ₂ and crossing the innermost turn. In this way, thewiring length from the feeding point of the coil wiring portion 11 a tothe inner peripheral end 11 a ₂ is reduced as much as possible byproviding the connection wiring portion 11 e, thereby enabling toresolve the problem of insufficient film thickness of the conductivelayer LL at the inner peripheral end 11 a ₂ due to the electricalresistance.

Next, as shown in FIGS. 4A and 4B, the base conductive layer L1 isformed on the base resin layer L0 by electroless plating (FIG. 2: StepS2). A specific method of the electroless plating is not particularlylimited, and the electroless plating can be performed by variousmethods. The thickness of the base conductive layer L1 is preferablyfrom 0.01 micrometer to 1 micrometer, and particularly preferably from0.05 micrometer to 0.5 micrometer. The base conductive layer L1 ispreferably made of at least one kind of metal selected from Cu, Ag, andAu. In this way, the base material 10 having the base resin layer L0 andthe base conductive layer L1 formed thereon sequentially constitutes awiring component 5B as a second intermediary body with respect to theplanar coil 1. In the manufacturing method of the planar coil 1according to the present embodiment, the wiring component 5B formanufacturing a planar coil can be prepared beforehand to startmanufacturing of the planar coil 1.

As shown in FIG. 4B, the base conductive layer L1 is formed not only onan upper surface of the base resin layer L0. That is, in practice, thebase conductive layer L1 is thinly formed not only on the upper surfaceof the base resin layer L0 but also on the side surfaces thereof . Thatis, the entire exposed surface of the base resin layer L0 is coveredwith the base conductive layer L1 by electroless plating.

As shown in FIGS. 5A and 5B, an electrolytic plating process withrespect to the wiring component 5B is performed to form the wiringconductive layer L2 on the base conductive layer L1 (FIG. 2: Step S3).As shown in FIG. 6, in the electrolytic plating process, the wiringcomponent 5B is immersed in a plating solution 52 in a plating tank 51,in a state with an external power source 50 being connected to thepower-feed wiring portion 11 d, and a voltage is applied to the coilwiring portion iia via the power-feed wiring portion 11 d. A specificmethod of the electrolytic plating is not particularly limited, and theelectrolytic plating can be performed by various methods. In this way,the base material 10 having the base resin layer L0, the base conductivelayer L1, and the wiring conductive layer L2 formed thereon sequentiallyconstitutes a wiring component 5C as a third intermediary body withrespect to the planar coil 1.

As shown in FIG. 5B, the wiring conductive layer L2 is formed not onlyon the upper surface of the base conductive layer L1. That is, inpractice, the wiring conductive layer L2 is thinly formed not only onthe upper surface of the base conductive layer L1 but also on the sidesurfaces thereof. That is, the entire exposed surface of the baseconductive layer L1 is covered with the wiring conductive layer L2 bythe electrolytic plating.

In a conventional method in which the connection wiring portion 11 e isnot provided, there is a problem that the resistance difference betweenthe both ends of the coil wiring portion 11 a is large in electrolyticplating for forming the wiring conductive layer L2, and the filmthickness difference between the both ends of the coil wiring portion 11a becomes large. However, in the present embodiment, because theresistance difference between the both ends of the coil wiring portion11 a can be reduced by providing the connection wiring portion 11 e andthe power-feed wiring portion 11 d, the film thickness differencebetween the outer peripheral end 11 a ₁ and the inner peripheral end 11a ₂ can be reduced.

Lastly, as shown in FIG. 7, the power-feed wiring portion 11 d and theconnection wiring portion 11 e in the wiring component 5C are removed(FIG. 2: Step S4). A removal method is not particularly limited, andphysical means such as punching or cutting, or chemical means such asetching can be used. If the base material 10 is a resin film, it is easyto remove the power-feed wiring portion 11 d and the connection wiringportion 11 e physically together with the base material 10 by punchingor cutting. In a case where the power-feed wiring portion 11 d and theconnection wiring portion 11 e are removed without removing the basematerial 10, the conductive layer LL (the base conductive layer L1 andthe wiring conductive layer L2) constituting the power-feed wiringportion 11 d and the connection wiring portion 11 e can be removed byusing etching. At this time, the base resin layer L0 can be left on thebase material 10, or can be removed by using a solvent or the like.Accordingly, the planar coil 1 shown in FIG. 1 is complete.

FIGS. 8A to 8F are plan views showing modifications of the planar coilpattern 11.

In the planar coil pattern 11 shown in FIG. 8A, the connecting position(the second connecting position) P₂ at one end of the connection wiringportion 11 e is set to the inner peripheral end 11 a ₂ of the coilwiring portion 11 a, and the connecting position (the third connectingposition) P₃ at the other end of the connection wiring portion 11 epasses through the center of a loop from the inner peripheral end 11 a ₂of the coil wiring portion 11 a and is set to a point in the middle ofthe innermost turn of the coil wiring portion 11 a on the opposite sideof the inner peripheral end 11 a ₂. That is, the connection wiringportion 11 e advances in a direction orthogonal to the winding directionthat passes through the inner peripheral end 11 a ₂ and is connected toa position crossing the innermost turn.

In the planar coil pattern 11 shown in FIG. 8B, the connecting position(the second connecting position) P₂ at one end of the connection wiringportion 11 e is set to the inner peripheral end 11 a ₂ of the coilwiring portion 11 a, and the connecting position (the third connectingposition) P₃ at the other end of the connection wiring portion 11 eextends from the inner peripheral end 11 a ₂ of the coil wiring portion11 a outside the loop and is set at a start position of the innermostturn of the coil wiring portion 11 a. That is, the connection wiringportion 11 e is provided to short-circuit between adjacent turns of thespiral turn. Accordingly, the inner peripheral end 11 a ₂ of the coilwiring portion 11 a can be short-circuited to a position closer to thefeeding point than that in the case shown in FIG. 8A, and the filmthickness difference at the both ends can be further reduced. However,removal of the connection wiring portion 11 e becomes more difficultthan the case shown in FIG. 8A.

In the planar coil pattern 11 shown in FIG. 8C, the connecting position(the second connecting position) P₂ at one end of the connection wiringportion 11 e is set at a position closer to the outer peripheral end 11a ₁ side than to the inner peripheral end 11 a ₂ of the coil wiringportion 11 a, and the connecting position (the third connectingposition) P₃ at the other end of the connection wiring portion 11 eextends in parallel with the winding direction passing through the innerperipheral end 11 a ₂ of the coil wiring portion 11 a and is set to apoint in the middle of the innermost turn. In this way, the one end andthe other end of the connection wiring portion 11 e can be set at anarbitrary position on the innermost turn of the coil wiring portion 11a.

In the planar coil pattern 11 shown in FIG. 8D, the connecting position(the first connecting position) P₁ of the power-feed wiring portion 11 dis set further on the side of the outer peripheral end 11 a ₁ of thecoil wiring portion 11 a as compared to the case shown in FIG. 3. In theplanar coil pattern 11 shown in FIG. 8E, the wiring width of thepower-feed wiring portion 11 d is narrower than that in the case shownin FIG. 3, and the power-feed wiring portion 11 d is formed by wiringhaving the same width as the coil wiring portion 11 a. In the planarcoil pattern 11 shown in FIG. 8F, the wiring width of the connectionwiring portion 11 e is wider than that in the case shown in FIG. 3, andthe connection wiring portion 11 e is formed by wider than the coilwiring portion 11 a. In this way, various pattern layouts and wiringwidths can be adopted for the power-feed wiring portion 11 d and theconnection wiring portion 11 e.

As described above, the wiring component 5B according to the presentembodiment includes the base material 10 and the planar coil pattern 11formed on the base material 10. The planar coil pattern 11 includes thecoil wiring portion 11 a, the power-feed wiring portion 11 d thatconnects the first connecting position of the coil wiring portion 11 aand the external power source, and the connection wiring portion 11 ethat short-circuits the second position of the coil wiring portion,being closer to the other end side than to the first connectingposition, and the third connecting position of the coil wiring portion,being closer to the one end side than to the second connecting position.The cross-section structure of the planar coil pattern 11 has the baseresin layer L0 formed on the base material 10, and the conductive layer(the base conductive layer L1) formed on the base resin layer L0.Because the connection wiring portion 11 e reduces the resistancedifference between the both ends of the coil wiring portion 11 a, thefilm thickness difference between the both ends of the planar coilpattern 11 can be reduced at the time of performing electrolyticplating, and the quality of the planar coil 1 can be improved. Becausethe cross-section structure of the planar coil pattern 11 has the baseresin layer L0 formed on the base material 10, and the base conductivelayer L1 formed on the base resin layer L0, the wiring conductive layerL2 can be formed by electrolytic plating, and the planar coil pattern 11can be easily formed without using an etching resist.

In the wiring component 5B according to the present embodiment, becausethe power-feed wiring portion 11 d is connected to a position closer tothe inner peripheral end 11 a ₂ side than the outer peripheral end 11 a₁ of the coil wiring portion 11 a, the power-feed wiring portion 11 dcan further reduce the resistance difference at the both ends of thecoil wiring portion 11 a at the time of performing electrolytic plating.Accordingly, the film thickness difference at the both ends of theplanar coil can be reduced, and the quality of the planar coil can beimproved.

In the manufacturing method of the planar coil according to the presentembodiment, because the power-feed wiring portion 11 d and theconnection wiring portion 11 e are removed after the power-feed wiringportion 11 d and the connection wiring portion 11 e are formed togetherwith the coil wiring portion 11 a by electrolytic plating, the filmthickness difference at the both ends of the planar coil pattern can bereduced, and electrical characteristics of the planar coil can beimproved.

A preferred embodiment of the present invention has been descried above.However, the present invention is not limited to the above embodiment,but various modifications can be made within the spirit of the presentinvention, and it is needless to say that such modifications are alsoincluded in the scope of the present invention.

For example, in the present embodiment, a case in which after the baseresin layer L0 containing a catalyst for electroless plating is formedby printing, the base conductive layer L1 is formed by electrolessplating, and the wiring conductive layer L2 is formed by electrolyticplating has been exemplified. However, the present invention is notlimited to such a manufacturing method, and can be applied to theconventional method in which, for example, after a desired coil patternis formed by etching of a metal layer by using an etching resist,electrolytic plating is performed with respect to the metal layer.

EXAMPLES

An evaluation test was performed for wiring resistance and filmthickness distribution of the planar coils 1 respectively prepared byusing the wiring components 5A according to comparative examples 1 to 4and examples 1 to 5 having wiring patterns shown in FIGS. 9A to 9C.

As shown in FIG. 9A, the wiring component 5A in comparative example 1includes the spiral coil wiring portion 11 a and the power-feed wiringportion 11 d connected to the outer peripheral end 11 a ₁ of the coilwiring portion 11 a (that is, a position at 0 millimeter from the outerperipheral end 11 a ₁). However, the connection wiring portion 11 e isnot provided. The power-feed wiring portion 11 d is connected to anexternal power source via a main wiring 30 formed on the base material10. The base resin layer L0 constituting these wiring patterns wasformed by screen printing resin containing Pd as a catalyst onto a PETfilm. It was set such that the shape of the coil wiring portion 11 a wascommon to all the wiring components 5A, the number of turns of the coilwiring portion 11 a was three, the entire length of the wiring from theouter peripheral end 11 a ₁ to the inner peripheral end 11 a ₂ was 450millimeters, and the wiring width was 0.5 millimeter. Further, themaximum loop size (vertical width Wy×lateral width Wx) was set to 50millimeters×50 millimeters.

As shown in FIG. 9B, the wiring component 5A in comparative examples 2to 4 includes the spiral coil wiring portion 11 a and the power-feedwiring portion 11 d connected not to the outer peripheral end 11 a ₁ ofthe coil wiring portion 11 a but to the vicinity of a terminationposition of the outermost turn (the position P₁ at 140 millimeters fromthe outer peripheral end 11 a ₁). However, the connection wiring portion11 e is not provided. The wiring width in the comparative example 2 wasset to 0.5 millimeter; however, the wiring width in the comparativeexample 3 was set to 0.2 millimeter, and the wiring width in thecomparative example 4 was set to 1 millimeter. Other configurations wereset to be the same as those shown in FIG. 9A.

As shown in FIG. 9C, the wiring component 5A according to examples 1 to5 includes the spiral coil wiring portion 11 a, the power-feed wiringportion 11 d connected to the vicinity of a termination position of theoutermost turn of the coil wiring portion 11 a (the position P₁ at 140millimeters from the outer peripheral end 11 a ₁), and the connectionwiring portion 11 e that short-circuits the inner peripheral end 11 a ₂of the coil wiring portion 11 a and a position closer to the outerperipheral end 11 a ₁ side than to the inner peripheral end 11 a ₂. Theconnecting position P₂ at one end of the connection wiring portion 11 ewas set to the inner peripheral end 11 a ₂ in the respective examples 1to 5. The connecting position P₃ at the other end of the connectionwiring portion 11 e was set to a position at 310 millimeters from theouter peripheral end 11 a ₁ in the examples 1, 3, 4, and 5, and to aposition at 250 millimeters from the outer peripheral end 11 a ₁ in theexample 2. The wiring width was set to 0.5 millimeter in the examples 1and 2, 1 millimeter in the example 3, 0.2 millimeter in the example 4,and 0.1 millimeter in the example 5. Other configurations were set to bethe same as those shown in FIG. 9A.

Electroless copper plating was performed to the wiring components 5A inthe comparative examples 1 to 4 and the examples 1 to 5, and the baseconductive layer L1 consisting of a Cu film having a thickness of about1.5 micrometers was formed on the base resin layer L0 to obtain thewiring component 5B as a precursor of the planar coil 1. A fluorescentX-ray film thickness meter (FT 9300 manufactured by Hitachi High-TechScience Corporation) was used to measure the film thickness of the baseconductive layer L1. Thereafter, wiring resistance R1 from the feedingpoint to the outer peripheral end 11 a ₁ and wiring resistance R2 fromthe feeding point to the inner peripheral end 11 a ₂ of the planar coil1 in the comparative examples 1 to 4 and the examples 1 to 5 wererespectively measured by a four-terminal method to obtain a resistanceratio R2/R1.

Next, electrolytic plating was performed at a current density of 4A/dm²for 30 minutes, to form the wiring conductive layer L2 consisting of aCu film on the base conductive layer L1, thereby obtaining the wiringcomponent 5C as a precursor of the planar coil 1. Further, thepower-feed wiring portion 11 d and the connection wiring portion 11 ewere removed by punching to complete the planar coils 1 according to thecomparative examples 1 to 4 and the examples 1 to 5. Thereafter, thefilm thickness of the conductive layers LL at the inner peripheral ends11 a ₂ and the outer peripheral ends 11 a ₁ of the planar coils 1 wasmeasured, to obtain a film thickness ratio T2/T1. For measuring the filmthickness, an electrical resistance thickness meter (RMP30-Smanufactured by Fischer Instruments K.K.) was used. Further,observational evaluation of the film thickness was performed by using anSEM (SS-550 manufactured by Shimazu Corporation) by exposing thecross-sectional surface of the conductive layer LL. The result thereofis shown in a table in FIG. 10.

As can be understood from FIG. 10, in the planar coil 1 in thecomparative example 1, because the power-feed wiring portion 11 d wasdirectly connected to the outer peripheral end 11 a ₁, the wiringresistance R1 from the feeding point to the outer peripheral end 11 a ₁was approximately zero. However, the wiring resistance R2 from thefeeding point to the inner peripheral end 11 a ₂ was as large as 10.1Ω,and hence the ratio R2/R1 between the wiring resistance R1 on the sideof the outer peripheral end 11 a ₁ and the wiring resistance R2 on theside of the inner peripheral end 11 a ₂ became extremely large as 1010.Further, while the film thickness T1 at the outer peripheral end 11 a ₁of the coil wiring portion 11 a was extremely thick as 47 micrometers,the film thickness T2 at the inner peripheral end 11 a ₂ was extremelythin as 26.3 micrometers. Therefore, the film thickness ratio T2/T1 atthe both ends of the coil wiring portion 11 a became as large as 1.79.

In the planar coil 1 in the comparative example 2, by providing thepower-feed wiring portion 11 d not at the outer peripheral end 11 a ₁but in the middle of the coil wiring portion 11 a, the ratio R2/R1between the wiring resistance R1 on the side of the outer peripheral end11 a ₁ and the wiring resistance R2 on the side of the inner peripheralend 11 a ₂ was decreased to 2.08, and the film thickness ratio T2/T1 atthe both ends of the coil wiring portion 11 a became as small as 1.40.

In the planar coil 1 in the comparative example 3, because the wiringwidth became narrower than that of the comparative example 2, the wiringresistances R1 and R2 respectively increased to R1=7.85 and R2=17.4, andthe resistance ratio R2/R1 became 2.22. Further, the film thicknessratio T2/T1 at the both ends became 1.45, which was slightly higher thanthat of the comparative example 2. In the planar coil 1 in thecomparative example 4, because the wiring width became wider than thatof the comparative example 2, the wiring resistances R1 and R2respectively decreased to R1=1.57 and R2=5.2, the resistance ratio R2/R1became 3.31. Further, the film thickness ratio T2/T1 at the both endsbecame 1.23, which was slightly lower than that of the comparativeexample 2.

In the planar coil 1 in the example 1, by providing the connectionwiring portion 11 e, the wiring resistance R2 from the feeding point tothe inner peripheral end 11 a ₂ decreased to 3.98Ω, and the resistanceratio R2/R1 became 1.26. Further, the film thickness T1 at the outerperipheral end 11 a ₁ of the coil wiring portion 11 a became 37.8micrometers, and the film thickness T2 at the inner peripheral end 11 a₂ thereof became 32.2 micrometers. Therefore, the film thickness ratioT2/T1 at the both ends became 1.17, which was lower than those of thecomparative examples 1 to 4. If the film thickness ratio T2/T1 is withina range from 0.8 to 1.2, it can be said that the film thickness ratio isgood.

In the planar coil 1 in the example 2, because the connecting positionat the other end of the connection wiring portion 11 e was changed from310 millimeters in the example 1 to the position at 250 millimeters, thewiring resistance R2 on the side of the inner peripheral end 11 a ₂further decreased, thereby further decreasing the resistance ratio R2/R1to 0.84. Further, the film thickness ratio T2/T1 at the both ends became0.90, which was lower than that of the example 1.

In the planar coil 1 in the example 3, because the wiring width waschanged from 0.5 millimeter in the example 1 to 1 millimeter, the wiringresistances R1 and R2 respectively decreased to R1=1.57 Ω and R2=1.99 Ω,and the resistance ratio R2/R1 became 1.27. Further, the film thicknessratio T2/T1 at the both ends became 1.15, which was a good filmthickness ratio as in the example 1.

In the planar coil 1 in the example 4, because the wiring width waschanged from 0.5 millimeter in the example 1 to 0.2 millimeter, thewiring resistances R1 and R2 respectively increased to R1=7.84 Ω andR2=9.97 Ω. However, the resistance ratio R2/R1 became 1.27. Further, thefilm thickness ratio T2/T1 at the both ends became 1.18, which was agood film thickness ratio as in the example 1.

In the planar coil 1 in the example 5, because the wiring width wasfurther decreased to 0.1 millimeter, the wiring resistances R1 and R2respectively increased to R1=15.7 Ω and R2=19.9 Ω. However, theresistance ratio R2/R1 became 1.27.

Further, the film thickness ratio T2/T1 at the both ends became 1.18,which was a good film thickness ratio as in the example 1.

What is claimed is:
 1. A wiring component comprising: a base material;and a planar coil pattern formed on the base material, wherein theplanar coil pattern includes: a coil wiring portion having one end,other end, and first to third connecting positions, the secondconnecting position being closer to the other end compared with thefirst connecting position, the third connecting position being closer tothe one end compared with the second connecting position; a power-feedwiring portion connected to the first connecting position; and aconnection wiring portion that short-circuits the second connectingposition and the third connecting position, and wherein a cross-sectionstructure of the planar coil pattern has a base resin layer formed onthe base material, and a conductive layer formed on the base resinlayer.
 2. The wiring component as claimed in claim 1, wherein the coilwiring portion includes a spiral pattern, and wherein the one end andthe other end of the coil wiring portion are an outer peripheral end andan inner peripheral end of the spiral pattern, respectively.
 3. Thewiring component as claimed in claim 2, wherein the second connectingposition is located at the inner peripheral end of the spiral pattern.4. The wiring component as claimed in claim 2, wherein the thirdconnecting position is located at a cross point of an innermost turn ofthe spiral pattern and an extension line extending from the innerperipheral end in a winding direction.
 5. The wiring component asclaimed in claim 2, wherein the first connecting position is apart fromthe outer peripheral end and located on an outermost turn of the spiralpattern.
 6. The wiring component as claimed in claim 1, wherein the basematerial comprises a resin film.
 7. The wiring component as claimed inclaim 1, wherein the base resin layer includes at least one of metalselected from Pd, Cu, Ni, Ag, Pt, and Au.
 8. The wiring component asclaimed in claim 1, wherein the conductive layer includes a baseconductive layer formed on the base resin layer by electroless plating,and a wiring conductive layer thicker than the base conductive layer,formed on the base conductive layer by electrolytic plating.
 9. Thewiring component as claimed in claim 8, wherein each of the baseconductive layer and the wiring conductive layer comprises at least oneof metal selected from Cu, Ag, and Au, respectively.